NO gas sensing at room temperature using single titanium oxide nanodot sensors created by atomic force microscopy nanolithography

• Li-Yang Hong and
• Heh-Nan Lin

Beilstein J. Nanotechnol. 2016, 7, 1044–1051, doi:10.3762/bjnano.7.97

• ][18][19][20][23], In2O3 [22], and TiO2 [24][27][28][29]. AFM nanolithography is a valuable technique for the fabrication of nanostructures and sensors [30][31]. Recently, we have reported on the fabrication of single titanium oxide nanodot (ND) ultraviolet (UV) sensors by AFM nanomachining and nano

• nanoparticles on the ND surface. Conclusion In summary, single titanium oxide ND sensors are realized by AFM nanolithography and used for NO gas sensing. A Ti NW is generated first by AFM nanomachining and a titanium oxide ND is then produced in the NW by AFM nano-oxidation. With contact electrodes, a resistive

• -oxidation [32]. In the present work, the application of single titanium oxide ND sensors for NO gas sensing at room temperature is reported. The performance of the ND gas sensors compares reasonably with metal oxide NW gas sensors reported in the literature. Experimental A schematic diagram of the AFM

Investigating organic multilayers by spectroscopic ellipsometry: specific and non-specific interactions of polyhistidine with NTA self-assembled monolayers

• Ilaria Solano,
• Pietro Parisse,
• Ornella Cavalleri,
• Federico Gramazio,
• Loredana Casalis and
• Maurizio Canepa

Beilstein J. Nanotechnol. 2016, 7, 544–553, doi:10.3762/bjnano.7.48

• determined by SE and AFM nanolithography [49]. The shape of the NTA spectra closely resembles that of T-OEG SAMS and does not show any evident features typical of intrinsic molecular optical absorptions [47][50]. Thus, the data are presented in comparison with a set of simulations based on the model of a

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current. Keywords: AFM nanolithography; junctionless transistors; pinch-off; scanning probe microscope; simulation; Introduction

• Snow et al. [11]. Subsequent results by this technique are presented in the references [12][13]. In fact, fabrication of nanostructures by SPL and particularly by using atomic force microscope (AFM) nanolithography has been developed with prominent results, and similar structures have been fabricated

• influential factors on SPL by AFM nanolithography, to obtain the optimized parameters for fabrication of the DGJLT. We also used 3-D TCAD simulations to investigate the principles of the DGJLT in the off state. We investigate the electron/hole density distribution and electric-field components along the

A collisional model for AFM manipulation of rigid nanoparticles

• Enrico Gnecco

Beilstein J. Nanotechnol. 2010, 1, 158–162, doi:10.3762/bjnano.1.19

• direction of motion of arbitrarily shaped nanoparticles is important for the guided formation of nanostructures. An interesting analogy is found with AFM nanolithography. In a recent paper we have shown that the patterning of amorphous polymers can be ‘tuned’ by varying the scan path of an AFM tip which